Transistor modules MOSFET (103 items)

Manufacturer: IXYS Case: Y3-DCB Semiconductor structure: transistor/transistor Drain-source voltage: 300V Drain current: 220A On-state resistance: 7.4mΩ Power dissipation: 1.5kW Polarisation: unipo...

Manufacturer: IXYS Case: Y3-Li Semiconductor structure: transistor/transistor Drain-source voltage: 100V Drain current: 500A On-state resistance: 1.8mΩ Polarisation: unipolar Electrical mounting: s...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 300ns Drain-source voltage: 900V Drain current: 56A On-state resistance: 0.145Ω Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 300ns Drain-source voltage: 900V Drain current: 43A On-state resistance: 0.16Ω Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 300ns Drain-source voltage: 900V Drain current: 33A On-state resistance: 0.23Ω Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Drain-source voltage: 900V Drain current: 109A On-state resistance: 10mΩ Polarisation: unipolar Electrical mounting: scre...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 250ns Drain-source voltage: 850V Drain current: 90A On-state resistance: 41mΩ Power dissipation: 1...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 250ns Drain-source voltage: 850V Drain current: 65A On-state resistance: 65mΩ Power dissipation: 8...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 205ns Drain-source voltage: 850V Drain current: 110A On-state resistance: 33mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 250ns Drain-source voltage: 800V Drain current: 53A On-state resistance: 0.14Ω Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 300ns Drain-source voltage: 800V Drain current: 49A On-state resistance: 0.14Ω Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 800ns Drain-source voltage: 800V Drain current: 44A On-state resistance: 74mΩ Power dissipation: 3...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 250ns Drain-source voltage: 800V Drain current: 39A On-state resistance: 0.19Ω Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 300ns Drain-source voltage: 800V Drain current: 37A On-state resistance: 0.19Ω Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 250ns Drain-source voltage: 800V Drain current: 29A On-state resistance: 0.27Ω Power dissipation: ...