Transistor modules MOSFET (103 items)

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 200ns Drain-source voltage: 250V Drain current: 168A On-state resistance: 12.9mΩ Power dissipation...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 130ns Drain-source voltage: 100V Drain current: 360A On-state resistance: 2.6mΩ Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 200ns Drain-source voltage: 600V Drain current: 40A On-state resistance: 0.14Ω Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 250ns Drain-source voltage: 500V Drain current: 68A On-state resistance: 55mΩ Power dissipation: 7...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 60ns Drain-source voltage: 40V Drain current: 660A On-state resistance: 0.85mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 250ns Drain-source voltage: 600V Drain current: 66A On-state resistance: 77mΩ Power dissipation: 9...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 250ns Drain-source voltage: 800V Drain current: 29A On-state resistance: 0.27Ω Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 200ns Drain-source voltage: 150V Drain current: 150A On-state resistance: 11mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 200ns Drain-source voltage: 300V Drain current: 86A On-state resistance: 33mΩ Power dissipation: 5...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 150ns Drain-source voltage: 100V Drain current: 200A On-state resistance: 7.5mΩ Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 150ns Drain-source voltage: 200V Drain current: 115A On-state resistance: 18mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 200ns Drain-source voltage: 300V Drain current: 130A On-state resistance: 19mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 200ns Drain-source voltage: 500V Drain current: 50A On-state resistance: 85mΩ Power dissipation: 6...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 450ns Drain-source voltage: 650V Drain current: 76A On-state resistance: 30mΩ Power dissipation: 5...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 200ns Drain-source voltage: 300V Drain current: 110A On-state resistance: 24mΩ Power dissipation: ...