Transistor modules MOSFET (99 items)

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 250ns Drain-source voltage: 600V Drain current: 90A On-state resistance: 56mΩ Power dissipation: 1...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 220ns Drain-source voltage: 650V Drain current: 108A On-state resistance: 24mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 190ns Drain-source voltage: 650V Drain current: 145A On-state resistance: 17mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 270ns Drain-source voltage: 650V Drain current: 170A On-state resistance: 13mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 450ns Drain-source voltage: 650V Drain current: 76A On-state resistance: 30mΩ Power dissipation: 5...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 200ns Drain-source voltage: 650V Drain current: 78A On-state resistance: 30mΩ Power dissipation: 5...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 200ns Drain-source voltage: 70V Drain current: 340A On-state resistance: 4mΩ Power dissipation: 70...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 206ns Drain-source voltage: 75V Drain current: 225A On-state resistance: 7mΩ Power dissipation: 73...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 150ns Drain-source voltage: 75V Drain current: 480A On-state resistance: 1.9mΩ Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 250ns Drain-source voltage: 800V Drain current: 29A On-state resistance: 0.27Ω Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 300ns Drain-source voltage: 800V Drain current: 37A On-state resistance: 0.19Ω Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 250ns Drain-source voltage: 800V Drain current: 39A On-state resistance: 0.19Ω Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 800ns Drain-source voltage: 800V Drain current: 44A On-state resistance: 74mΩ Power dissipation: 3...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 300ns Drain-source voltage: 800V Drain current: 49A On-state resistance: 0.14Ω Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 250ns Drain-source voltage: 800V Drain current: 53A On-state resistance: 0.14Ω Power dissipation: ...